Browsing by Subject "Semiconductor doping"
Now showing items 1-12 of 12
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Article
Conservation laws and hierarchies of potential symmetries for certain diffusion equations
(2009)We show that the so-called hidden potential symmetries considered in a recent paper [M.L. Gandarias, New potential symmetries for some evolution equations, Physica A 387 (2008) 2234-2242] are ordinary potential symmetries ...
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Article
Delta(δ)-doping of semiconductor nanowires
(2013)The electronic sub-band structure of single δ-layers in GaAs nanowires have been determined via the self-consistent solution of the Poisson-Schrödinger equations in the effective mass approximation. The spread and sheet ...
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Conference Object
Doping studies of n-type CsBi4Te6 thermoelectric materials
(Affiliation: Dept of Electrical and Computer Eng., Northwestern University, Evanston, IL 60208, United StatesCorrespondence Address: Lane, M.A.Dept of Electrical and Computer Eng., Northwestern University, Evanston, IL 60208, United States, 2001)We have previously reported the successful p-type doping of CsBi4Te6 which had a high figure of merit at temperatures below 300 K. In this study, several dopants were explored to make n-type CsBi4Te6. A program of measurements ...
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Article
Enhancing the nanoscratch resistance of pulsed laser deposited DLC films through molybdenum-doping
(2017)Pulsed laser deposition was used to grow DLC and molybdenum-doped DLC (DLC:Mo) films, with metal contents up to 3.2 at.%, on silicon substrates. The microstructural details of the films were investigated using X-ray ...
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Article
Light-induced mobility enhancement in delta-doped GaAs/In0.26Ga0.74As/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001)
(1999)Persistent photoconductivity in 80 angstroms strained GaAs/In0.26Ga0.74As/GaAs quantum wells was investigated by measuring the Shubnikov de Haas and Hall effects at 4.2 K. The quantum wells were grown by molecular beam ...
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Article
Optical and electrical properties of selectively delta-doped strained InxGa1-xAs/GaAs quantum wells
(1996)We report here an investigation of selectively delta-doped strained InGaAs/GaAs quantum wells. Electronic structures of the systems were calculated by self-consistently solving the Schrödinger and Poisson equations and the ...
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Article
Pb doping of In2O3 and their conversion to highly conductive PbS/In2S3-3xO3x nanowires with infra red emission
(2016)We have grown Pb doped In2O3 nanowires at 800°C which have the cubic bixbyite crystal structure of In2O3 and contain orthorhombic α-PbO. These had resistances up to ≈10 Ω and exhibited photoluminescence at 2.5 eV but we ...
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Article
Pb doping of In2O3 and their conversion to highly conductive PbS/In2S3-3xO3x nanowires with infra red emission
(2016)We have grown Pb doped In2O3 nanowires at 800°C which have the cubic bixbyite crystal structure of In2O3 and contain orthorhombic α-PbO. These had resistances up to ≈10 Ω and exhibited photoluminescence at 2.5 eV but we ...
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Article
Properties and tailoring of the ubiquitous core-shell p-n junction in semiconductor nanowires by δ-doping
(2013)The properties of the core-shell p-n junction in GaAs nanowires have been investigated via the self-consistent solution of the Poisson-Schrödinger equations in cylindrical coordinates and the effective mass approximation ...
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Article
Properties of Si-doped GaN and AlGaN/GaN heterostructures grown by RF-MBE on high resistivity Fe-doped GaN
(2006)Silicon-doped GaN epilayers and AlGaN/GaN heterostructures were developed by nitrogen plasma-assisted molecular beam epitaxy on high resistivity iron-doped GaN (0001) templates and their properties were investigated by ...
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Article
Pulsed laser deposition and thermal characterization of Ni-doped La5Ca9Cu24O41 thin films
(2011)Highly b-axis oriented polycrystalline Ni-doped La5Ca 9Cu24O41 thin films have been grown on (0 0 1) SrTiO3 substrates using the pulsed laser deposition technique. EDX measurements have revealed nearly stoichiometric ...
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Article
Thermoelectric properties of LaNi1-xCoxO3 solid solution
(2003)The thermoelectric properties of the selected members of the LaNi 1-xCoxO3 solid solution were investigated. The electrical properties of the solution investigated were determined from the doping level. The substitution ...